
The expensive electronics of spacecraft and satellites are subjected to constant exposure to ionizing radiation and high-energy cosmic rays. The recent discovery made by an international team of scientists will significantly reduce the cost of "space electronics", increasing its security from cosmic rays.
Gallium nitride (GaN) is a promising semiconductor nanomaterial for electronics, as semiconductor structures based on it are resistant to ionizing radiation.
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Scientists from Moldova, Russia and the United States have established that nanotechnologically modified gallium nitride has an even higher resistance to ionizing radiation.
According to Nanotechweb, Yon Tiginyanu (Ion Tiginyanu) from the Academy of Sciences of Moldova, scientists from the Joint Institute for Nuclear Research in Dubna and specialists from the University of Virginia treated the GaN plate with powerful ultraviolet radiation in a potassium hydroxide environment. As a result, a matrix of nanopyramids was formed on the surface, which allowed the GaN nanostructure to withstand ten times the large ionizing radiation.
The experiments were carried out by scientists with ions of 85 and 130 MeV on a cyclotron in the Laboratory of Nuclear Reactions named after GN. Flerov in Dubna.
According to the developers, the new material will allow you to make various electronic devices for their use in extreme conditions. For example, sensors and electronics of satellites and devices of other aerospace equipment.
Reference to the source:
rnd.cnews.ru/tech/news/top/index_science.shtml?2007/05/22/251222