Intel: PRAM mass production by the end of 2007

In the first half of this year, Intel plans to start shipping small batches of working memory chips with phase change memory (PCM), or, as it is also called, PRAM. Mass production of a new generation of memory should begin before the end of 2007. Recall that such major manufacturers as Fujitsu, Samsung, Renesas, Hitachi and others are interested in promoting PRAM.

Intel intends to release PRAM chips in compliance with the 90-nm standards. Their density will be 128 Mbit. PRAM memory will be manufactured using technology purchased from Ovonyx, which provides for the use of chalcogenides. Ed Doller, head of flash memory technology at Intel, said that the new memory can withstand up to 100 million read / write cycles and its lifespan is at least 10 years.

Recall that last fall, Intel and ST Microelectronics presented a 250-mm substrate with samples of PRAM-memory with a density of 128 Mbit. Then Intel promised to start shipping PRAM chips in November 2006, but then the delivery times were postponed. Today's news suggests that the research phase is nearing completion, and, most likely, by the beginning of 2008 we will see the first devices with integrated PRAM memory (perhaps at CES 2008?).

Source: www.3dnews.ru