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Samsung introduced a new line of SSD 850 EVO with 3-bit flash memory chips V-NAND

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Samsung Electronics recently introduced a new line of solid-state drives 850 EVO, which expanded the existing model range of SSD-drives. The drives are based on 3D Vertical NAND flash memory technology with 3-bit cells and provide a significant increase in performance and durability compared with the previous generation. If earlier such solutions were made mainly for the needs of the corporate segment, now Samsung believes that the time has come for ordinary PCs. The new SSD 850 EVO will go on sale in 53 countries in America, Europe and Asia, starting this December.
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Unlike 850 Pro models for powerful client PCs, as well as small and medium enterprise servers that use 3D Vertical NAND flash memory with 2-bit cells, the new 850 EVO solid-state drives use 3D V-NAND memory with 3- bit cells. They are best suited for use in conventional consumer devices, such as a laptop or gaming PC.

Samsung 850 EVO drives will come in four versions: with 1 TB of memory, 500 GB, 250 GB or 120 GB. New items have the following performance indicators: 540 MB / s in sequential read mode and 520 MB / s in write mode. Due to the presence of Samsung TurboWrite technology, the 850 EVO model with 1 TB of memory demonstrates random write performance of 90.000 IOPS, which makes it possible to quickly store large amounts of data. In addition, the drives are highly reliable: models with 500 GB and 1 TB of memory have a guarantee of 80 GB rewriting daily (DWPD) for five years.
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Next year, Samsung plans to introduce an extended line of SSD 850 EVO based on 3-bit V-NAND technology in the form factors mSATA and M.2. The price of new drives in the domestic market is still questionable.

Source: https://habr.com/ru/post/245955/


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