Samsung Electronics begins mass production of the industry's first 8-gigabit DDR4 based on 20-nm process technology
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Samsung Electronics has announced the start of mass production of advanced 8-gigabit DDR4 memory, as well as the corresponding 32 GB modules based on 20-nm process technology for powerful server systems and data centers.
Thanks to the development of a new 8-gigabit DDR4, Samsung will now be able to offer a full-featured line of RAM manufactured using the 20-nm process technology, including 4-gigabit DDR3 modules for PC and 6-gigabit LPDDR3 for mobile devices.
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At the beginning of the month, the new 8 Gbps DDR4 chip has already found use in a 32 GB module. The data transfer rate per contact reaches 2400 Mbit / s, which is 29% more efficient than DDR3 server memory modules (1866 Mbit / s). The 8-gigabit DDR4 chip will allow you to create modules with a maximum capacity of up to 128 GB thanks to 3D TSV technology (Through Silicon Via).
The new DDR4 memory with high data density also supports improved error correction features, which will increase its reliability in the process of building corporate servers. In addition, in the new chips and DDR4 modules, the operating voltage is 1.2 volts, which is the least possible value today.
Samsung Electronics has announced the start of mass production of advanced 8-gigabit DDR4 memory, as well as the corresponding 32 GB modules based on 20-nm process technology for powerful server systems and data centers.
Thanks to the development of a new 8-gigabit DDR4, Samsung will now be able to offer a full-featured line of RAM manufactured using the 20-nm process technology, including 4-gigabit DDR3 modules for PC and 6-gigabit LPDDR3 for mobile devices.
')
At the beginning of the month, the new 8 Gbps DDR4 chip has already found use in a 32 GB module. The data transfer rate per contact reaches 2400 Mbit / s, which is 29% more efficient than DDR3 server memory modules (1866 Mbit / s). The 8-gigabit DDR4 chip will allow you to create modules with a maximum capacity of up to 128 GB thanks to 3D TSV technology (Through Silicon Via).
The new DDR4 memory with high data density also supports improved error correction features, which will increase its reliability in the process of building corporate servers. In addition, in the new chips and DDR4 modules, the operating voltage is 1.2 volts, which is the least possible value today.
Source: https://habr.com/ru/post/242047/
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