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Samsung began mass production of 3.2 TB 3D V-NAND SSD-memory for servers with NVMe interface

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Samsung Electronics has announced the start of mass production of 3D V-NAND solid-state drives with NVMe interface and 3.2 TB of memory intended for use in high-performance enterprise server systems of the hi-end segment.



The new NVME PCIe SSD model SM1715 uses Samsung's self-designed stack memory for HHHL form factor cards (half-height, half-length; half height, half length). This made it possible to create a solid state drive with a capacity of 3.2 TB, which is twice the previous record of NVME SSD with a capacity of 1.6 TB. The solid state drive SM1715 is an improved version of the model XS1715 in terms of performance and reliability. This 2.5-inch SSD has been honored with the 2014 Flash Memory Summit Best of Show Award as one of the most innovative flash memory products.

The new NVMe SSD with a capacity of 3.2 TB provides a sequential read speed of up to 3000 MB / s and write speed of up to 2200 MB / s. Indicators IOPS (the number of operations with random data blocks of 4 KB) is 750 thousand and 130 thousand for reading and writing, respectively. In addition, the SM1715 solid-state drive with a capacity of 3.2 GB is designed for 10 full rewriting cycles daily (DWPD) for five years. This ensures high reliability, which is critical for enterprise-level servers.

Drive Samsung SM1715 will be made in two versions: 1.6 TB and 3.2 TB. The 2.5-inch model XS1715 with NVMe-interface will also be available in two options: with a capacity of 800 GB and 1.6 TB. Pricing not yet announced.

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Source: https://habr.com/ru/post/238981/


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