Samsung launches the industry's first 28-megapixel BSI CMOS APS-C image sensor
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Samsung Electronics has announced the APS-C CMOS 28-megapixel image sensor for digital cameras - S5KVB2. The new sensor has already gone into mass production - they supplied it with a new compact camera Samsung NX1, which was presented last week as part of Photokina 2014 in Cologne, Germany.
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The basis of the new development of Samsung lies in the use of pixel backlight technology, which allowed to increase the sensitivity of each pixel and increase the absorption of light by peripheral areas by 30%, and therefore provide more accurate and high-quality images. Metal layers are formed from copper, using a 65-nanometer process technology with reduced power consumption. This provides the S5KVB2 with a tangible advantage over today's most common image sensors, which are manufactured using a 180-nanometer process using aluminum conductors, namely, a significant reduction in power consumption and heat dissipation. Through the use of new process technology and integrated circuit architecture, the image sensor S5KVB2 also significantly reduces the noise in the process.
Since the metal layers are under photodiodes, Samsung engineers gained more freedom in the design process of their topology, which, ultimately, increased the consistent reading speed. Due to its design features, the new S5KVB2 sensor allows not only to receive high-quality photos, but also to shoot UHD-video at 30 frames per second.
Samsung Electronics has announced the APS-C CMOS 28-megapixel image sensor for digital cameras - S5KVB2. The new sensor has already gone into mass production - they supplied it with a new compact camera Samsung NX1, which was presented last week as part of Photokina 2014 in Cologne, Germany.
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The basis of the new development of Samsung lies in the use of pixel backlight technology, which allowed to increase the sensitivity of each pixel and increase the absorption of light by peripheral areas by 30%, and therefore provide more accurate and high-quality images. Metal layers are formed from copper, using a 65-nanometer process technology with reduced power consumption. This provides the S5KVB2 with a tangible advantage over today's most common image sensors, which are manufactured using a 180-nanometer process using aluminum conductors, namely, a significant reduction in power consumption and heat dissipation. Through the use of new process technology and integrated circuit architecture, the image sensor S5KVB2 also significantly reduces the noise in the process.
Since the metal layers are under photodiodes, Samsung engineers gained more freedom in the design process of their topology, which, ultimately, increased the consistent reading speed. Due to its design features, the new S5KVB2 sensor allows not only to receive high-quality photos, but also to shoot UHD-video at 30 frames per second.
Source: https://habr.com/ru/post/237915/
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