Samsung is launching the mass release of the industry's first DDR4 memory modules based on 3D TSV technology.
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Yesterday, Samsung Electronics announced the start of mass production of the first in the industry RDIMM standard DDR4 memory with a capacity of 64 GB. The new modules consist of 36 DDR4 DRAM chips, each of which, in turn, consists of four 4 Gbps DDR4 DRAM chips. The chips are distinguished by low power consumption and are manufactured using advanced 20 nm process technology. Microcircuits are assembled into a single stack using the latest method of end-to-end connection of crystals called TSV (Through Silicon Via). The new high-density modules will play a key role in the further development of the corporate server and cloud applications segment, as well as in the diversification of data center solutions.
The launch of mass production of 3D TSV modules marks the beginning of a new milestone in the history of memory technology; Recall that the latest important development of Samsung in this area was the 3D Vertical NAND (V-NAND) flash memory, first introduced last year. While 3D V-NAND technology is based on high vertical structures of cell arrays inside a monolithic crystal, 3D TSV is an innovative packet design technology that allows you to interconnect vertical layers of crystals.
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To create a 3D TSV DRAM package, DDR4 crystals are grinded to a thickness of several tens of microns, after which hundreds of tiny holes are made in the crystals. They are vertically interconnected by means of electrodes that are passed through these holes. As a result, the new 3D TSV module has twice the performance and half the power consumption compared to the module, built on the basis of wired crystal strapping.
In the near future, Samsung plans to interconnect more than four DDR4 crystals using 3D TSV technology to create higher density DRAM modules. This will speed up the expansion of solutions for the premium class memory market and, consequently, the transition from DDR3 memory to DDR4 memory in the server market.
Samsung has been working hard to improve the 3D TSV technology since 2010, when they first developed 8 GB DRAM RDIMM modules of 40 nm class. This year, Samsung began to use the new TSV package production system, designed for mass production of new server modules.
Yesterday, Samsung Electronics announced the start of mass production of the first in the industry RDIMM standard DDR4 memory with a capacity of 64 GB. The new modules consist of 36 DDR4 DRAM chips, each of which, in turn, consists of four 4 Gbps DDR4 DRAM chips. The chips are distinguished by low power consumption and are manufactured using advanced 20 nm process technology. Microcircuits are assembled into a single stack using the latest method of end-to-end connection of crystals called TSV (Through Silicon Via). The new high-density modules will play a key role in the further development of the corporate server and cloud applications segment, as well as in the diversification of data center solutions.
The launch of mass production of 3D TSV modules marks the beginning of a new milestone in the history of memory technology; Recall that the latest important development of Samsung in this area was the 3D Vertical NAND (V-NAND) flash memory, first introduced last year. While 3D V-NAND technology is based on high vertical structures of cell arrays inside a monolithic crystal, 3D TSV is an innovative packet design technology that allows you to interconnect vertical layers of crystals.
')
To create a 3D TSV DRAM package, DDR4 crystals are grinded to a thickness of several tens of microns, after which hundreds of tiny holes are made in the crystals. They are vertically interconnected by means of electrodes that are passed through these holes. As a result, the new 3D TSV module has twice the performance and half the power consumption compared to the module, built on the basis of wired crystal strapping.
In the near future, Samsung plans to interconnect more than four DDR4 crystals using 3D TSV technology to create higher density DRAM modules. This will speed up the expansion of solutions for the premium class memory market and, consequently, the transition from DDR3 memory to DDR4 memory in the server market.
Samsung has been working hard to improve the 3D TSV technology since 2010, when they first developed 8 GB DRAM RDIMM modules of 40 nm class. This year, Samsung began to use the new TSV package production system, designed for mass production of new server modules.
Source: https://habr.com/ru/post/234859/
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