Samsung launches the industry's first 3D V-NAND flash memory with 32 layers of memory cells.
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Samsung Electronics has announced the start of mass production of the industry's first 3D V-NAND flash memory, with 32 vertically stacked layers of memory cells in its bulk structure.
This is the second generation of flash memory 3D V-NAND from Samsung. The serial production of chips of the first generation began in August last year, and they consisted of 24 layers of memory cells. Despite the fact that increasing the number of layers requires a higher level of design technology, it provides a significant increase in production efficiency, since Samsung can use almost the same equipment that was used in the production of the first generation 3D V-NAND memory.
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In addition, Samsung announced the launch of a new line of solid-state drives of premium class with a capacity of 128 GB, 256 GB, 512 GB and 1 TB, based on the new flash memory. Unlike solid state drives based on the first generation 3D V-NAND flash memory, which were intended for data centers, Samsung’s new SSDs are also designed to cover the upper segment of the PC. The new SSDs are about twice as long as the write resource and consume 20% less energy than drives based on the MLC NAND planar flash memory. The reliability of data storage in bulk chips in comparison with conventional two-dimensional flash memory increases by 2-10 times.
Later this year, Samsung will introduce new second-generation V-NAND 3D flash SSD models with even higher volume and reliability.
Samsung Electronics has announced the start of mass production of the industry's first 3D V-NAND flash memory, with 32 vertically stacked layers of memory cells in its bulk structure.
This is the second generation of flash memory 3D V-NAND from Samsung. The serial production of chips of the first generation began in August last year, and they consisted of 24 layers of memory cells. Despite the fact that increasing the number of layers requires a higher level of design technology, it provides a significant increase in production efficiency, since Samsung can use almost the same equipment that was used in the production of the first generation 3D V-NAND memory.
')
In addition, Samsung announced the launch of a new line of solid-state drives of premium class with a capacity of 128 GB, 256 GB, 512 GB and 1 TB, based on the new flash memory. Unlike solid state drives based on the first generation 3D V-NAND flash memory, which were intended for data centers, Samsung’s new SSDs are also designed to cover the upper segment of the PC. The new SSDs are about twice as long as the write resource and consume 20% less energy than drives based on the MLC NAND planar flash memory. The reliability of data storage in bulk chips in comparison with conventional two-dimensional flash memory increases by 2-10 times.
Later this year, Samsung will introduce new second-generation V-NAND 3D flash SSD models with even higher volume and reliability.
Source: https://habr.com/ru/post/224747/
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