Samsung made a discovery that could turn the entire consumer electronics industry
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Earlier this month, Samsung Electronics announced the discovery of a revolutionary method for the production of graphene - a unique material, behind which stands the future of new generation electronic devices. The development was carried out by specialists from the Samsung Advanced Technology Institute (SAIT), in collaboration with colleagues from Songjungwan University in Seoul.
Graphene significantly exceeds the silicon used in modern electronics in a number of semiconductor properties (in particular, it has a hundred times greater electron mobility). It is stronger than steel, has high thermal and electrical conductivity and, finally, is very flexible, which implies its use for the production of flexible displays and wearable devices of the near future.
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The Samsung Advanced Technology Institute, in collaboration with the Department of Advanced Materials and Engineering, Songjungwan University, has developed a large-area single-crystal graphene plate production technique. Leading engineers all over the world have been researching ways to make graphene for a long time, but they faced many obstacles. It was found that the process of multicrystalline synthesis (synthesis of small particles to create plates of a large area) impairs the electrical and mechanical characteristics of the material, which limits the possibilities of its use and makes the future process of its commercialization difficult.
The new method, developed by SAIT and staff at Songjungwan University, allows you to synthesize graphene plates into a single crystal, while maintaining the electrical and mechanical properties of the material. Efficient technology allows to repeatedly obtain single-crystal graphene on a single semiconductor substrate.
Over the past few decades, the growth of the semiconductor industry has been driven by the ability to increase the area of silicon wafers produced, while at the same time simplifying the process. Since the commercial use of graphene is aimed at reducing the dependence of the industry on silicon, it was extremely important to develop a new method of obtaining a whole graphene crystal of a large area.
Samsung Electronics and Songjungwan University have been nano-research partners since 2006. The emergence of a new advanced development demonstrates a strong scientific database of institutions, which has helped them to achieve such outstanding results and become the driving force of next generation technologies.
The study was funded by the Ministry of Education, Science and Technology of Korea as part of the Project to Nurture Leading Creative Researching Experts Program.
The Samsung Advanced Technology Institute was established as the R & D branch of the Samsung Group in October 1987. The institution is the center for the creation of advanced technologies in accordance with the company's philosophy - striving for new technological achievements in order to change the world for the better. In addition, SAIT is the main technical department of the Samsung Group.
Earlier this month, Samsung Electronics announced the discovery of a revolutionary method for the production of graphene - a unique material, behind which stands the future of new generation electronic devices. The development was carried out by specialists from the Samsung Advanced Technology Institute (SAIT), in collaboration with colleagues from Songjungwan University in Seoul.
Graphene significantly exceeds the silicon used in modern electronics in a number of semiconductor properties (in particular, it has a hundred times greater electron mobility). It is stronger than steel, has high thermal and electrical conductivity and, finally, is very flexible, which implies its use for the production of flexible displays and wearable devices of the near future.
')
The Samsung Advanced Technology Institute, in collaboration with the Department of Advanced Materials and Engineering, Songjungwan University, has developed a large-area single-crystal graphene plate production technique. Leading engineers all over the world have been researching ways to make graphene for a long time, but they faced many obstacles. It was found that the process of multicrystalline synthesis (synthesis of small particles to create plates of a large area) impairs the electrical and mechanical characteristics of the material, which limits the possibilities of its use and makes the future process of its commercialization difficult.
The new method, developed by SAIT and staff at Songjungwan University, allows you to synthesize graphene plates into a single crystal, while maintaining the electrical and mechanical properties of the material. Efficient technology allows to repeatedly obtain single-crystal graphene on a single semiconductor substrate.
Over the past few decades, the growth of the semiconductor industry has been driven by the ability to increase the area of silicon wafers produced, while at the same time simplifying the process. Since the commercial use of graphene is aimed at reducing the dependence of the industry on silicon, it was extremely important to develop a new method of obtaining a whole graphene crystal of a large area.
Samsung Electronics and Songjungwan University have been nano-research partners since 2006. The emergence of a new advanced development demonstrates a strong scientific database of institutions, which has helped them to achieve such outstanding results and become the driving force of next generation technologies.
The study was funded by the Ministry of Education, Science and Technology of Korea as part of the Project to Nurture Leading Creative Researching Experts Program.
The Samsung Advanced Technology Institute was established as the R & D branch of the Samsung Group in October 1987. The institution is the center for the creation of advanced technologies in accordance with the company's philosophy - striving for new technological achievements in order to change the world for the better. In addition, SAIT is the main technical department of the Samsung Group.
Source: https://habr.com/ru/post/219525/
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