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New Brief: Samsung Announces 3D V-NAND Flash Memory SSDs

Good afternoon, Habr!

Less than a week from the announcement of the new Samsung Samsung Vertical NAND flash memory with vertical architecture , as the company introduced the first solid-state drive for corporate data storage systems, built on the basis of the most voluminous NAND chips. This happened at the Flash Memory Summit 2013 conference.



The novelty has a SATA III 6 Gb / s interface and is intended for use in servers and computer centers. The full range consists of two versions of the solid-state drive with 480 and 960 GB. The older model uses 64 layers of MLC 3D V-NAND memory cells with a capacity of 128 Gbps each.
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The announced SSD consumes 40% less energy than their predecessors. In addition, Samsung engineers managed to increase the speed of sequential and random recording of information by 20%. The stated resource of the work of the drives is 35.000 rewriting cycles, which is 3-6 times more than the 19-nm MLC NAND flash memory used in consumer SSDs. The novelty is made in a 2.5-inch form factor, its dimensions are 100 x 70 x 7 mm.

Source: https://habr.com/ru/post/190788/


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