DRAM inventor won Kyoto award

This year’s prestigious Japanese Kyoto Technology Award was awarded to IBM scientist Robert Dennard .
In 1968, he received a patent for an invention, which described the principles of memory on field-effect transistors. Each memory cell on the circuit contained a field-effect transistor and a capacitor, and the charge corresponded to one data bit. The cells were placed in the form of a grid, which made it possible to contact them in any order. Since the charge must often be restored, this memory is called the “dynamic random access” - DRAM.
Using the method proposed by Dennard, it was possible to create integrated circuits with a multitude of memory cells operating at high speed. The first schemes of this type were released for sale in 1973 in two versions - with a volume of 1 KB and 4 KB.
Subsequently, Dennard led a group of researchers involved in the problem of the miniaturization of transistors, which resulted in the creation of modern chips.