Fujitsu ReRAM: a worthy competitor of flash memory
Fujitsu has published information about its new development: non-volatile random access memory ReRAM (Resistive RAM) with low power consumption and high data transfer rate.
Fujitsu Labs engineers managed to achieve serious success by changing the structure of ReRAM by adding titanium to nickel oxide and lowering the current in the transistor, required for erasing operations, to 100 mA. This reduced the time of this operation to 5 ns. Thus, Fujitsu's ReRAM memory turned out to be 10,000 times faster than the existing ReRAM samples made without titanium.
With these improvements, and also due to the lower cost of the production process, ReRAM may well compete with flash memory. Fujitsu plans to start mass production of resistive memory in 2010.
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via Gizmodo
Fujitsu Labs engineers managed to achieve serious success by changing the structure of ReRAM by adding titanium to nickel oxide and lowering the current in the transistor, required for erasing operations, to 100 mA. This reduced the time of this operation to 5 ns. Thus, Fujitsu's ReRAM memory turned out to be 10,000 times faster than the existing ReRAM samples made without titanium.
With these improvements, and also due to the lower cost of the production process, ReRAM may well compete with flash memory. Fujitsu plans to start mass production of resistive memory in 2010.
')
via Gizmodo
Source: https://habr.com/ru/post/17660/
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