New Brief: Samsung Launches 128-Gbps 3-Bit MLC NAND Memory Based on 10-nm Process Technology

Samsung Electronics announced the start of mass production of 3-bit MLC NAND memory chips with a capacity of 128 Gbps using a 10-nanometer process technology in April of this year. A highly developed chip will effectively integrate high-density memory into solutions such as embedded NAND storage and SSD solid-state drives. The new NAND flash memory of 128 GB boasts a high level of performance - the data transfer rate is 400 MB / s, as well as support for the Toggle DDR 2.0 interface.



Thanks to the new development, Samsung plans to expand the supply of branded memory cards by 128 GB. In addition, the company intends to increase the production of solid-state drives of more than 500 GB, which should speed up the widespread introduction of solid-state drives in computer systems, and also allow Samsung to take the lead in the transition from hard drives to solid-state notebooks.

The demand for a high-performance 3-bit MLC NAND flash memory with a capacity of 128 GB, as well as for SSD-drives with a capacity of more than 250 GB, is constantly growing. In particular, the Samsung SSD 840 series has become very popular over the past six months.
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Samsung launched production of the MLC NAND flash memory at 64 Gbps 10nm class in November last year. Only five months later, the company offers ready-made 128 Gbps chips, which further expand its high-density memory line. The novelty will increase the performance by more than two times compared to the 20-nm MLC NAND chips at 64 Gbps, presented in 2010.