The final version of the specification of super-fast RAM is published.
The Hybrid Memory Cube Consortium, which includes more than 100 companies, including IBM, Cray, HP, ARM and the two founders of the consortium, Samsung and Micron, has published the final version of the HMC specification.
Hybrid Memory Cube is a fundamentally new architecture that surpasses DDR3 10-15 times in speed, 70% in energy efficiency and 10 times in space saving on a chip. A key feature of the technology is the location of control logic and several layers of memory cells one above the other, which are connected by conductors passing through several layers of silicon. The specification provides for the creation of chips with a capacity of 2, 4 and 8 gigabytes with a maximum bandwidth of up to 320 gigabytes per second. The new generation of chips will be in demand primarily in high-performance servers and supercomputers, which already now face the problem of insufficient bandwidth of the memory subsystem.
Hybrid Memory Cube is a fundamentally new architecture that surpasses DDR3 10-15 times in speed, 70% in energy efficiency and 10 times in space saving on a chip. A key feature of the technology is the location of control logic and several layers of memory cells one above the other, which are connected by conductors passing through several layers of silicon. The specification provides for the creation of chips with a capacity of 2, 4 and 8 gigabytes with a maximum bandwidth of up to 320 gigabytes per second. The new generation of chips will be in demand primarily in high-performance servers and supercomputers, which already now face the problem of insufficient bandwidth of the memory subsystem.
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Source: https://habr.com/ru/post/175521/
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