Samsung speeds up memory
Less than a year has passed since Samsung and Toshiba decided to jointly develop NAND flash memory with the Toggle DDR 2.0 interface. In May of this year, Samsung announced the start of production of a 64 Gbps (8 GB) NAND chip with multi-level cells (Multi-Level Cell) and the above interface.
The novelty is made according to the technology of 20-nm class and has a capacity of 400 Mbit / s. This is 10 times faster than today's most common SDR (Single Data Rate) NAND memory, which provides bandwidth of 40 Mbps, and three times the performance of Toggle DDR 1.0 memory, which is limited to 133 Mbps. The development is aimed primarily at the market of high-performance smartphones, tablets and solid-state drives. Thus, the presented chips will provide significant performance gains in new generation smartphones and solid-state drives with SATA3 interface (data transfer rate can reach 6 Gb / s).
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In turn, Toshiba is already ready to release NAND memory using 19-nanometer technology. Last month, the company began trial shipments of 8 GB microcircuits with two-bit cells. Sixteen of these chips, packaged in one case, allow you to create 128 GB flash drives for communicators, tablets and other gadgets.
In addition, Samsung has recently begun mass production of 32 GB DDR3 memory modules built on the basis of 4 Gbps DRAM chips, which are created according to the standards of the 30-nm class process technology. New RAM memory type RDIMM (Registered Dual Inline Memory Module) is sharpened for use in server systems.
32 GB RDIMM modules are capable of operating at a rather high frequency of 1866 MHz and require a supply voltage of 1.35 volts. If you compare them with predecessors of similar capacity, built on 40-nm class DRAM - they give out an operating frequency of just 1333 MHz at a supply voltage of 1.5 volts.
Samsung began to stamp 4 Gbps DDR3 DRAM chips of 30-nm class last February, and in the near future the company plans to begin delivering similar solutions based on the more actual 20-nm class technical process. Shipment of chips, created with the latest technology, should begin in the second half of this year.
The novelty is made according to the technology of 20-nm class and has a capacity of 400 Mbit / s. This is 10 times faster than today's most common SDR (Single Data Rate) NAND memory, which provides bandwidth of 40 Mbps, and three times the performance of Toggle DDR 1.0 memory, which is limited to 133 Mbps. The development is aimed primarily at the market of high-performance smartphones, tablets and solid-state drives. Thus, the presented chips will provide significant performance gains in new generation smartphones and solid-state drives with SATA3 interface (data transfer rate can reach 6 Gb / s).
')
In turn, Toshiba is already ready to release NAND memory using 19-nanometer technology. Last month, the company began trial shipments of 8 GB microcircuits with two-bit cells. Sixteen of these chips, packaged in one case, allow you to create 128 GB flash drives for communicators, tablets and other gadgets.
In addition, Samsung has recently begun mass production of 32 GB DDR3 memory modules built on the basis of 4 Gbps DRAM chips, which are created according to the standards of the 30-nm class process technology. New RAM memory type RDIMM (Registered Dual Inline Memory Module) is sharpened for use in server systems.
32 GB RDIMM modules are capable of operating at a rather high frequency of 1866 MHz and require a supply voltage of 1.35 volts. If you compare them with predecessors of similar capacity, built on 40-nm class DRAM - they give out an operating frequency of just 1333 MHz at a supply voltage of 1.5 volts.
Samsung began to stamp 4 Gbps DDR3 DRAM chips of 30-nm class last February, and in the near future the company plans to begin delivering similar solutions based on the more actual 20-nm class technical process. Shipment of chips, created with the latest technology, should begin in the second half of this year.
Source: https://habr.com/ru/post/120488/
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