Nanotube Transistors: Record 30 GHz

French scientists have created a carbon tube transistor on a silicon substrate, the limiting frequency of which reaches 30 GHz. The team of record holders included representatives of the Institute of Electronics, Microelectronics and Nanotechnologies and the Laboratory of Condensed Matter Physics.



This is not the first achievement of French scientists in the field of nanotechnology. Earlier, in 2006, they created a transistor operating at frequencies up to 6 GHz. As you can see, in just a year, researchers have achieved more than decent results. If we consider that the first transistor on nanotubes was created quite recently (in 2001), then this achievement looks even more impressive.



When creating transistors, researchers face one serious problem: the complexity of manipulating and controlling the parameters of nanotubes during their growth on a silicon substrate. It was precisely this task that the French scientist managed to brilliantly solve. They obtained a uniform array of nanotubes using the dielectrophoresis method, which allows nanotubes to be applied not only on silicon, but also on organic substrates, since they operate at room temperature.

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via CNRS , IXBT