Samsung has developed DDR4 memory modules, which are 40% more energy efficient than DDR3

Samsung introduced the DDR4 RAM modules created using the 30 nm process technology.

The modules are capable of transmitting data at a speed of up to 3200 million transactions per second, at a voltage of 1.2 V. For comparison: the speed of DDR3 modules manufactured using the 30-nm process technology and designed for a voltage of 1.35 or 1.5 V is up to 1600 million transmissions . The new modules consume 40% less electricity than DDR3 modules designed for 1.5 V.

The modules use the Pseudo Open Drain technology, which reduced the current consumption by half compared to DDR3.
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Using the new architecture, DDR4 can operate at speeds from 12.8 to 25.6 GB / s. Now the DDR3 speed is up to 12.8 GB / s, and DDR2 - up to 6.4 GB / s.

In the second half of the year, Samsung, in collaboration with server manufacturers, plans to complete the standardization of DDR4 by JEDEC.

UPD. Fixed.