Semiconductors in 3D!

For us, energy efficiency is not only an economic issue, but, above all, an environmental one. We are currently working on a new 8 GB RDIMM memory module, with which we can save up to 40-50% of energy. Working on the basis of green technology Green DDR3 DRAM, TSV-module has already been successfully tested.



Cross-wired silicon interconnects

Compared with previous developments, it is more productive. This became possible mainly due to the three-dimensional technology of through-silicon interconnects (3D TSV - Three-Dimensional Through-Silicon Via).
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The meaning of 3D TSV is the controlled packaging of semiconductor crystals, which ultimately provides a much higher interconnect density (for example, through the use of vertical micron holes with copper fill in silicon boards), and, therefore, increase the speed of information transmission, and reduce energy costs. In general, it is one of the most advanced and breakthrough technologies in the semiconductor industry today.

Figuratively speaking, this is the same principle as with a travel bag - if properly packed, it will fit much more.

Green Memory

Our 40-nm class register memory RDIMM modules are the first in the eco-friendly Green Memory series.

Tests have shown that an 8 GB RDIMM memory module using 3D TSV technology saves up to 40% energy compared to conventional RDIMM memory. At the same time, TSV technology will increase the recording density by more than 50% and reduce server power consumption, while increasing memory capacity and performance.

The wide distribution of three-dimensional TSV-technology will begin approximately in 2012. Samsung plans to apply the benefits of TSV technology in nodes made on the 30-nm technology and other more modern processes.



More information about Samsung Green DDR3 is on the Green Memory website.